Author:
Otsuka Nobuyuki,Nishizawa Jun-ichi,Kikuchi Hideyuki,Oyama Yutaka
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference49 articles.
1. T. Suntola, J. Antson, Finnish Patent No. 52395, 1974 and US Patent No. 4058430, 1977.
2. New approach to the atomic layer epitaxy of GaAs using a fast gas stream
3. Atomic layer epitaxy
4. Surface processes of selective growth by atomic layer epitaxy
5. J. Nishizawa, Y. Kokubun, Ext. Abstr. 16th Conference on Solid State Device & Materials, 1984, p. 1.
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献