Use of Multifunctional Carboxylic Acids and Hydrogen Peroxide To Improve Surface Quality and Minimize Phosphine Evolution During Chemical Mechanical Polishing of Indium Phosphide Surfaces-Reference-Cited by-同舟云学术

Use of Multifunctional Carboxylic Acids and Hydrogen Peroxide To Improve Surface Quality and Minimize Phosphine Evolution During Chemical Mechanical Polishing of Indium Phosphide Surfaces

Published:2013-07-23 Issue:31 Volume:52 Page:10664-10672
ISSN:0888-5885
Container-title:Industrial & Engineering Chemistry Research
language:en
Short-container-title:Ind. Eng. Chem. Res.

Author:

Matovu John B.¹²,Ong Patrick²,Leunissen Leonardus H. A.²,Krishnan Sitaraman¹,Babu S. V.¹

Affiliation:

1. Department of Chemical and Biomolecular Engineering and the Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699, United States

2. Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, 3001 Heverlee, Belgium

Publisher

American Chemical Society (ACS)

Subject

Industrial and Manufacturing Engineering,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/ie400689q

Reference41 articles.

1. Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates

2. In Situ HCl Etching of InP in Shallow-Trench-Isolated Structures

3. Chemical Mechanical Polishing of InP

4. Peddeti, S.Chemical Mechanical Polishing of Ge and InP for Microelectronic Applications. Ph. D. Thesis,Clarkson University,New York, July 2011.

5. The Etching of InP in HCl Solutions: A Chemical Mechanism

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of ammonium halide salts on wet chemical nanoscale etching and polishing of InGaAs surfaces for advanced CMOS devices;Materials Science in Semiconductor Processing;2023-07

2. Role of Diethylene Triaminepentaacetic Acid Pentapotassium Salt on Ruthenium CMP in H₂O₂-Based Slurries;ECS Journal of Solid State Science and Technology;2022-12-01

3. Bifunctional Metal Oleate as an Alternative Method to Remove Surface Oxide and Passivate Surface Defects of Aminophosphine-Based InP Quantum Dots;Nanomaterials;2022-02-08

4. CMP processing of high mobility channel materials: alternatives to Si;Advances in Chemical Mechanical Planarization (CMP);2022

5. Design of composite abrasives and substrate materials for chemical mechanical polishing applications;Applied Nanoscience;2019-11-07