In Situ HCl Etching of InP in Shallow-Trench-Isolated Structures-Reference-Cited by-同舟云学术

In Situ HCl Etching of InP in Shallow-Trench-Isolated Structures

Published:2012 Issue:4 Volume:159 Page:H455-H459
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Orzali T.,Wang G.,Waldron N.,Merckling C.,Richard O.,Bender H.,Wang W.-E.,Caymax M.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Radosavljevic M. Dewey G. Fastenau J. M. Kavalieros J. Kotlyar R. Chu-Kung B. Liu W. K. Lubyshev D. Metz M. Millard K. Mukherjee N. Pan L. Pillarisetty R. Rachmady W. Shah U. Chau Robert , 2010 IEEE International Electron Devices Meeting (IEDM), p - 126.

2. Pillarisetty R. Chu-Kung B. Corcoran S. Dewey G. Kavalieros J. Kennel H. Kotlyar R. Le V. Lionberger D. Metz M. Mukherjee N. Nah J. Rachmady W. Radosavljevic M. Shah U. Taft S. Then H. Zelick N. Chau R. , 2010 IEEE International Electron Devices Meeting (IEDM), p - 150.

3. Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates

4. Loo R. Wang G. Orzali T. Waldron N. Merckling C. Leys M. R. Richard O. Bender H. Eyben P. Vandervorst W. Caymax M. , ECS Trans. This volume.

5. Thin Film InP Epitaxy on Si (001) Using Selective Aspect Ratio Trapping

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of Ga pre-deposition on Si (111) surface for InAs nanowire selective area hetero-epitaxy;Journal of Applied Physics;2018-04-14

2. Inspection, Characterization and Classification of Defects for Improved CMP of III-V Materials;ECS Journal of Solid State Science and Technology;2015

3. Chemical mechanical planarization of patterned InP in shallow trench isolation (STI) template structures using hydrogen peroxide–based silica slurries containing oxalic acid or citric acid;Microelectronic Engineering;2014-03

4. Use of Multifunctional Carboxylic Acids and Hydrogen Peroxide To Improve Surface Quality and Minimize Phosphine Evolution During Chemical Mechanical Polishing of Indium Phosphide Surfaces;Industrial & Engineering Chemistry Research;2013-07-23