The effect of Ga pre-deposition on Si (111) surface for InAs nanowire selective area hetero-epitaxy-Reference-Cited by-同舟云学术

The effect of Ga pre-deposition on Si (111) surface for InAs nanowire selective area hetero-epitaxy

Published:2018-04-14 Issue:14 Volume:123 Page:145301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liu Ziyang¹²,Merckling Clement¹,Rooyackers Rita¹,Franquet Alexis¹,Richard Olivier¹,Bender Hugo¹,Vila María³⁴^ORCID,Rubio-Zuazo Juan³⁴,Castro Germán R.³⁴,Collaert Nadine¹,Thean Aaron¹,Vandervorst Wilfried¹⁵,Heyns Marc¹²

Affiliation:

1. imec, Kapeldreef 75, 3001 Leuven, Belgium

2. Department of Materials Engineering, KULeuven, 3001 Leuven, Belgium

3. SpLine CRG BM25 Beamline, European Synchrotron Radiation Facility, 71, Avenue des Martys, 38000 Grenoble, France

4. Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), 28049 Madrid, Spain

5. Department of Physics and Astronomy, KULeuven, 3001 Leuven, Belgium

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4998001

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5. Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

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