Self-limiting growth conditions on (001) InP by alternate triethylindium and tertiarybutylphosphine supply in ultrahigh vacuum-Reference-Cited by-同舟云学术

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Self-limiting growth conditions on (001) InP by alternate triethylindium and tertiarybutylphosphine supply in ultrahigh vacuum

Published:1999-09 Issue:5 Volume:17 Page:3008-3018
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Otsuka Nobuyuki,Nishizawa Jun-ichi,Kikuchi Hideyuki,Oyama Yutaka

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.581974

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends;Journal of Applied Physics;2013-01-14

2. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process;Journal of Applied Physics;2005-06-15

3. Fabrication of a P-stabilized InP(001) surface at low pressure and temperature using t-butylphosphine (TBP);Surface Science;2004-09

4. Stoichiometry control and point defects in compound semiconductors;Materials Science in Semiconductor Processing;2003-10

5. Adsorption and decomposition of t-butylphosphine (TBP) on an InP(0 0 1)–(2 × 4)/c(2 × 8) surface studied by STM, TPD, and HREELS;Applied Surface Science;2003-05

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