Adsorption and decomposition of t-butylphosphine (TBP) on an InP(0 0 1)–(2 × 4)/c(2 × 8) surface studied by STM, TPD, and HREELS-Reference-Cited by-同舟云学术

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Adsorption and decomposition of t-butylphosphine (TBP) on an InP(0 0 1)–(2 × 4)/c(2 × 8) surface studied by STM, TPD, and HREELS

Published:2003-05 Issue: Volume:212-213 Page:329-333
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Fukuda Y.,Kobayashi T.,Shirai T.,Kadotani N.,Shimomura M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. A.C. Jones, P. O’Brien, CVD of Compound Semiconductors, VCH, Weinheim, Germany, 1997.

2. Fabrication of a P-stabilized GaP(001)-(2×1) surface at very low pressure studied by LEED, STM, AES, and RHEED

3. Adsorption and decomposition of triethylphosphine (TEP) and tertiarybutylphosphine (TBP) on GaP(001) studied by HREELS and TPD

4. Decomposition of triethylphosphine (TEP) and tertiarybutylphosphine (TBP) on a GaP(001)–(2×4) surface studied by HREELS

5. Self-limiting growth conditions on (001) InP by alternate triethylindium and tertiarybutylphosphine supply in ultrahigh vacuum

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inorganic and Organic Functionalisation of Silicon Studied by Density Functional Theory;High Performance Computing in Science and Engineering ' 18;2019

2. Surface Chemistry of tert- Butylphosphine (TBP) on Si(001) in the Nucleation Phase of Thin-Film Growth;Chemistry - A European Journal;2016-08-30

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