Decomposition of triethylphosphine (TEP) and tertiarybutylphosphine (TBP) on a GaP(001)–(2×4) surface studied by HREELS
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
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1. Metalorganic chemical vapor deposition of III‐V semiconductors
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3. Decomposition of trimethylgallium on Si(100): Spectroscopic identification of the intermediates
4. A comparative study of the adsorption and thermal decomposition of triethylgallium and trimethylgallium at GaAs(100) surfaces studied by electron energy loss spectroscopy
5. Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces
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1. Inorganic and Organic Functionalisation of Silicon Studied by Density Functional Theory;High Performance Computing in Science and Engineering ' 18;2019
2. Surface Chemistry of tert- Butylphosphine (TBP) on Si(001) in the Nucleation Phase of Thin-Film Growth;Chemistry - A European Journal;2016-08-30
3. Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (001)-(2×4) surface;Surface Science;2006-11
4. Organic chemistry on solid surfaces;Surface Science Reports;2006-07
5. Surface structure of phosphorus-terminatedGaP(001)−(2×1);Physical Review B;2004-10-29
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