Amino-arsine and -phosphine compounds for the MOVPE of III–V semiconductors-Reference-Cited by-同舟云学术

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Amino-arsine and -phosphine compounds for the MOVPE of III–V semiconductors

Published:1993-03 Issue:1-2 Volume:129 Page:37-44
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zimmermann G.,Protzmann H.,Marschner T.,Zsebök O.,Stolz W.,Göbel E.O.,Gimmnich P.,Lorberth J.,Filz T.,Kurpas P.,Richter W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Alternate sources and growth chemistry for OMVPE and CBE processes

2. Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine

3. High‐purity InP layer grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

4. Monoethylarsine as a novel replacement for arsine in the vapor deposition of GaAs

5. Metalorganic chemical vapor deposition of high‐purity GaAs using tertiarybutylarsine

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1. An experimental approach for real time mass spectrometric CVD gas phase investigations;Scientific Reports;2018-01-10

2. Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In0.48Ga0.52P on GaAs;Japanese Journal of Applied Physics;1999-02-15

3. Source Molecules;Organometallic Vapor-Phase Epitaxy;1999

4. Metalorganic molecular beam epitaxy and etching of AlGaSb using trisdimethylaminoantimony;Journal of Crystal Growth;1998-03

5. Addendum to “Metalorganic molecular beam epitaxy and etching of GaAs and GaSb using trisdimethylaminoarsenic and trisdimethylaminoantimony” [J. Crystal Growth 145 (1994) 668];Journal of Crystal Growth;1997-12

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