Heavily carbon-doped GaAs grown on various oriented GaAs substrates by MOMBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
2. Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy
3. Characterization of heavily carbon-doped GaAs with a hole concentration of the order of 1021 cm−3 grown by metalorganic molecular beam epitaxy and its application to InGaP/GaAs heterojunction bipolar transistors
4. and heterojunction bipolar transistors with a super heavily carbon-doped base grown by metalorganic molecular beam epitaxy
5. Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B;Journal of Crystal Growth;2019-04
2. Non-Alloy Cr∕Au Ohmic Contacts in the Technology of Planar Beam-Lead GaAs p–i–n Diodes;Technical Physics Letters;2005
3. MOMBE growth of InGaP on (100) and (411)A GaAs substrates using tertiarybutylphosphine (TBP);Journal of Crystal Growth;1998-06
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