Recent progress in multi-wafer CBE systems

Author:

Ando Hideyasu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. presented at the 4th Int. Conf. on Chemical Beam Epitaxy and Related Epitaxial Growth Techniques;Ando,1993

2. High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system

3. H. Ando, S. Yamaura, N. Okamoto, T. Tomioka, T. Takahashi, S. Sasa and T. Fujii, in: Proc. 21st State-of-the-Art Program on Compound Semiconductors, Vol. 94-34, pp. 60–69.

4. Recent progress in the multi-wafer CBE system

5. Growth of GaInAs(P) using a multiwafer MOMBE

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