High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system-Reference-Cited by-同舟云学术

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High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system

Published:1995-05 Issue: Volume:150 Page:1281-1286
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ando H.,Okamoto N.,Yamaura S.,Tomioka T.,Takahashi T.,Shigematsu H.,Kawano A.,Sasa S.,Fujii T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Heterostructure bipolar transistors: What should we build?

2. Internal photoemission and energy‐band offsets in GaAs‐GaInPp‐I‐Nheterojunction photodiodes

3. Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure

4. Main Electron Traps in In1-xGaxP (0.12≤x≤ 0.96)

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

2. Recent progress in multi-wafer CBE systems;Journal of Crystal Growth;1997-01

3. Growth of GaInAs(P) using a multiwafer MOMBE;Journal of Crystal Growth;1996-07

4. Recent progress in the multi-wafer CBE system;Journal of Crystal Growth;1996-07

5. Benefits of chemical beam epitaxy for micro and optoelectronic applications;Progress in Crystal Growth and Characterization of Materials;1996-01

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