Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy

Published:2004 Issue:3 Volume:22 Page:1444
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Wilk A.,Zaknoune M.,Godey S.,Dhellemmes S.,Gérard P.,Chaix C.,Mollot F.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantitative analysis of dc characteristics of Ga0.5In0.5P/GaAs heterojunction bipolar devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-11

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