Internal photoemission and energy‐band offsets in GaAs‐GaInPp‐I‐Nheterojunction photodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104574
Reference9 articles.
1. Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction byC‐Vprofiling
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3. Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition
4. Two-Dimensional Electron Gas at GaAs/Ga0.52In0.48P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
5. Band lineup for a GaInP/GaAs heterojunction measured by a high‐gainNpnheterojunction bipolar transistor grown by metalorganic chemical vapor deposition
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