Two-step growth of InP on GaAs substrates by metalorganic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Long-Wavelength Receiver Optoelectronic Integrated Circuit on 3-Inch-Diameter GaAs Substrate Grown by InP-on-GaAs Heteroepitaxy
2. Direct MOVPE growth of InP on GaAs substrates
3. A Study of Heteroepitaxy of InP on GaAs by Metalorganic Vapor‐Phase Epitaxy
4. Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing
5. Heteroepitaxial growth of InP on a GaAs substrate by low‐pressure metalorganic vapor phase epitaxy
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1. Reduced Dislocation Density of an InP/GaAs Virtual Substrate Grown by Metalorganic Chemical Vapor Deposition;Coatings;2022-05-24
2. Numerical analysis of the output waveguide design for 1.55 μm square microcavity lasers directly grown on GaAs substrates;Physica E: Low-dimensional Systems and Nanostructures;2018-07
3. Molecular Beam Epitaxy of GaSb on GaAs Substrates with Compositionally Graded LT-GaAs x Sb 1- x Buffer Layers;Chinese Physics Letters;2017-01
4. Low-Temperature and Metamorphic Buffer Layers;Handbook of Crystal Growth;2015
5. The anisotropic distribution of dislocations and tilts in metamorphic GaInAs/AlInAs buffers grown on GaAs substrates with miscut angles toward (111)A;Journal of Alloys and Compounds;2014-06
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