A Study of Heteroepitaxy of InP on GaAs by Metalorganic Vapor‐Phase Epitaxy-Reference-Cited by-同舟云学术

A Study of Heteroepitaxy of InP on GaAs by Metalorganic Vapor‐Phase Epitaxy

Published:1988-09-01 Issue:9 Volume:135 Page:2358-2361
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Pak Kangsa¹²³,Wakahara Akihiro¹²³,Sato Tomohiko¹²³,Yoshida Akira¹²³,Yonezu Hiroo¹²³,Itoh Nobuo¹²³,Takagi Yoji¹²³

Affiliation:

1. Department of Electrical and Electronic Engineering, Toyhohashi University of Technology, Toyohashi 440, Japan

2. Department of Electronics, College of Engineering, University of Osaka Prefecture, Sakai, Osaka 591, Japan

3. Toyoko Kagaku Company, Limited, Kawasaki, Kanagawa 211, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2096270/pdf

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1. Optical characterization of highly mismatched InP/GaAs(l11)B epitaxial heterostructures;Microelectronics Journal;1997-10

2. Two-step growth of InP on GaAs substrates by metalorganic vapor phase epitaxy;Journal of Crystal Growth;1996-12

3. Role of a nucleation layer in suppressing interfacial pitting in;Journal of Electronic Materials;1993-04

4. Structural and optoelectronic properties and their relationship with strain relaxation in heteroepitaxial InP layers grown on GaAs substrates;Journal of Applied Physics;1992-05

5. InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si;Japanese Journal of Applied Physics;1991-12-30