The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy
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5. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
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