GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19971312?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
2. Hybrid organic–inorganic semiconductor-based light-emitting diodes
3. Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy
4. Deep level defects in Mg‐doped, p‐type GaN grown by metalorganic chemical vapor deposition
5. Characteristics of light‐emitting diodes based on GaNp‐njunctions grown by plasma‐assisted molecular beam epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD;Journal of Crystal Growth;2000-09
2. Study of interface reactions between Si and GaN at high temperatures using scanning photoelectron microscopy and X-ray absorption spectroscopy;Journal of Crystal Growth;2000-07
3. Ultraviolet and violet GaN light emitting diodes on silicon;Applied Physics Letters;1998-01-26
4. Direct Growth of AIN Thin Layer on (111)Si Substrate by RF-MBE;MRS Proceedings;1998
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