Electrical transport properties of highly Mg-doped GaN epilayers grown by MOCVD-Reference-Cited by-同舟云学术

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Electrical transport properties of highly Mg-doped GaN epilayers grown by MOCVD

Published:2000-12 Issue:1-4 Volume:221 Page:734-738
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Cheong M.G,Kim K.S,Namgung N.W,Han M.S,Yang G.M,Hong C.-H,Suh E.-K,Lim K.Y,Lee H.J,Yoshikawa A

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

3. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

4. Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy

5. Activation energies of Si donors in GaN

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials;Journal of Applied Physics;2020-08-28

2. Hole mobility of strained GaN from first principles;Physical Review B;2019-08-29

3. Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting;Physical Review Letters;2019-08-29

4. Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy;Applied Physics Letters;2013-07-15

5. Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures;Journal of Applied Physics;2011-12

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