Hole mobility of strained GaN from first principles-Reference-Cited by-同舟云学术

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Hole mobility of strained GaN from first principles

Published:2019-08-29 Issue:8 Volume:100 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Poncé Samuel^ORCID,Jena Debdeep,Giustino Feliciano

Funder

Leverhulme Trust

Engineering and Physical Sciences Research Council

Horizon 2020

Partnership for Advanced Computing in Europe AISBL

National Science Foundation

Cornell Center for Materials Research

Materials Research Science and Engineering Center, Harvard University

Air Force Office of Scientific Research

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.100.085204/fulltext

Reference142 articles.

1. Review—The Current and Emerging Applications of the III-Nitrides

2. GaN Power Transistors on Si Substrates for Switching Applications

3. GaN Technology for Power Electronic Applications: A Review

4. The 2018 GaN power electronics roadmap

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