MOVPE growth of tunable DBR laser diode emitting at 1060nm
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Integrated DFB-DBR laser modulator grown by selective area metalorganic vapor phase epitaxy growth technique
2. MOCVD regrowth over GaAs/AlGaAs gratings for high power long-lived InGaAs/AlGaAs lasers
3. Characterization and determination of the band‐gap discontinuity of the InxGa1−xAs/GaAs pseudomorphic quantum well
4. Materials characteristics of pseudomorphic high electron mobility transistor structures with InxGa1−xas single quantum well and GaAs-InxGa1−xas (0.25 < x < 0.4) thin strained superlattice active layers
5. MOVPE growth of highly strained InGaAs/GaAs quantum wells
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low Transparency Current Density and Low Internal Loss of 1060-nm InGaAs Laser With GaAsP–GaAs Superlattices as Strain-Compensated Layer;IEEE Photonics Technology Letters;2009-10
2. MOVPE growth optimization for laser diodes with highly strained InGaAs MQWs;Journal of Crystal Growth;2007-01
3. HigHighly strained InGaAs/GaAs quantum wells emitting beyond 1.2 µm;Crystal Research and Technology;2005-09
4. Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050nm;Journal of Crystal Growth;2000-12
5. MOVPE strain layers – growth and application;Journal of Crystal Growth;2000-12
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