MOVPE strain layers – growth and application
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. MOVPE growth of tunable DBR laser diode emitting at 1060nm
2. Strained InGaAs-GaAs single-quantum-well lasers coupled to n-type δ-doping-improved static and dynamic performance
3. Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasers
4. Doping optimizations for InGaAs/InP composite channel HEMTs
5. Quantum-barrier-varactor diodes for high-efficiency millimetre-wave multipliers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Rigorous analysis of photoluminescence efficiency for characterisation of electronic properties of InP(100) surfaces;Vacuum;2002-09
2. High Efficiency HBV Multipliers for Millimetre Wave Generation;Terahertz Sources and Systems;2001
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