Integrated DFB-DBR laser modulator grown by selective area metalorganic vapor phase epitaxy growth technique-Reference-Cited by-同舟云学术

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Integrated DFB-DBR laser modulator grown by selective area metalorganic vapor phase epitaxy growth technique

Published:1994-12 Issue:1-4 Volume:145 Page:902-906
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tanbun-Ek T.,Chen Y.K.,Grenko J.A.,Byrne E.K.,Johnson J.E.,Logan R.A.,Tate A.,Sergent A.M.,Wecht K.W.,Sciortine P.F.,Chu S.N.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Semiconductor photonic integrated circuits

2. Static characteristics of 1.5 - 1.6 µm GaInAsP/InP buried heterostructure butt-jointed built-in integrated lasers

3. Wavelength tuning of GaInAsP/InP integrated laser with butt-jointed built-in distributed Bragg reflector

4. Lasing characteristics of 1.5 - 1.6 µm GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors

5. Selective area MOVPE of GaInAs/InP heterostructures on masked and nonplanar (100) and {111} substrates

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1. Selective area epitaxy by metalorganic chemical vapor deposition– a tool for photonic and novel nanostructure integration;Progress in Quantum Electronics;2021-01

2. Integrated optoelectronics: practicalities and potentials;SPIE Proceedings;2005-01-31

3. Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator;Applied Physics Letters;2002-05-06

4. Electroabsorption Modulators;WDM Technologies;2002

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