HigHighly strained InGaAs/GaAs quantum wells emitting beyond 1.2 µm
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference19 articles.
1. Data transmission over single-mode fiber by using 1.2-μm uncooled GaInAs-GaAs laser for Gb/s local area network
2. Highly strained InGaAs QW VCSEL with lasing wavelength at 1.22 [micro sign]m
3. Low-threshold, high-temperature operation of 1.2 [micro sign]m InGaAs vertical cavity lasers
4. Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215–1233 nm
5. High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm
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