Effect of interface roughness on performance of AlGaAs/InGaAs/GaAs resonant tunneling diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes
2. Effects of interface flatness and abruptness on optical and electrical characteristics of GaAs/AlGaAs quantum structures grown by metalorganic vapor phase epitaxy
3. Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates
4. Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasers
5. Three and six logic states by the vertical integration of InAlAs/InGaAs resonant tunneling structures
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