Current–Voltage Characteristics of γ-Al2O3/epi-Si Resonant Tunneling Diodes with Different Quantum Well Thicknesses-Reference-Cited by-同舟云学术

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Current–Voltage Characteristics of γ-Al2O3/epi-Si Resonant Tunneling Diodes with Different Quantum Well Thicknesses

Published:2005-07-08 Issue:7A Volume:44 Page:4795-4798
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mosammat Halima Khatun,Shahjahan Mohammad,Ito Ryoki,Sawada Kazuaki,Ishida Makoto

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hetero-epitaxial Γ-Al2O3 on Si (100) substrate by sputtering;Materials Letters;2015-02

2. Fabrication of Al/MgO/C and C/MgO/InSe/C tunneling barriers for tunable negative resistance and negative capacitance applications;Materials Science and Engineering: B;2013-07

3. TEM study of RTD structure fabricated with epi-Si/γ-Al2O3 heterostructure;Thin Solid Films;2010-02

4. Capacitance–voltage characteristics and switching time of double barrier resonant tunneling diode fabricated with epi-Si and γ-Al2O3;Physica E: Low-dimensional Systems and Nanostructures;2007-01

5. Electrical Characteristics of Epitaxial γ-Al2O3/Si for Quantum Tunneling Device;Japanese Journal of Applied Physics;2006-06-08

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