Three and six logic states by the vertical integration of InAlAs/InGaAs resonant tunneling structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341370
Reference4 articles.
1. Multiple-Valued Logic—its Status and its Future
2. Heterojunction double‐barrier diodes for logic applications
3. Combining resonant tunneling diodes for signal processing and multilevel logic
4. Application of a resonant tunnelling structure to demonstrate subsurface damage and surface migration on InGaAs during AuGe contact anneal
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2. Semiconductors, Compound;Kirk-Othmer Encyclopedia of Chemical Technology;2006-09-15
3. Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications;Solid-State Electronics;2006-06
4. Phosphorus diffusion in Si-based resonant interband tunneling diodes and tri-state logic using vertically stacked diodes;Materials Science in Semiconductor Processing;2005-02
5. Tri-State Logic Using Vertically Integrated Si–SiGe Resonant Interband Tunneling Diodes With Double NDR;IEEE Electron Device Letters;2004-09
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