Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes-Reference-Cited by-同舟云学术

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Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes

Published:1997-08 Issue:1-2 Volume:179 Page:18-25
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Suhara Michihiko,Nagao Chuma,Honji Hidetaka,Miyamoto Yasuyuki,Furuya Kazuhito,Takemura Riichiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Theoretical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs

2. Surface diffusion and related phenomena in MBE growth of III–V compounds

3. Multiatomic step formation mechanism of metalorganic vapor phase epitaxial grown GaAs vicinal surfaces and its application to quantum well wires

4. Scanning tunneling microscopy study of two-dimensional nuclei on GaAs grown by metalorganic chemical vapor deposition

5. Wide terrace formation during metalorganic vapor phase epitaxy of GaAs, AlAs, and AlGaAs

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1. Semiconductor nanostructures enabled by aerosol technology;Frontiers of Physics;2014-01-22

2. Planarization and Processing of Metamorphic Buffer Layers Grown by Hydride Vapor-Phase Epitaxy;Journal of Electronic Materials;2013-10-30

3. Controlled synthesis of semiconductor nanostructures in the liquid phase;Chemical Society Reviews;2011

4. In situ etching for total control over axial and radial nanowire growth;Nano Research;2010-03-20

5. Scanning tunneling microscopy study of interfacial structure of InAs quantum dots on InP(001) grown by a double-cap method;Applied Physics Letters;2007-02-26

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