Scanning tunneling microscopy study of interfacial structure of InAs quantum dots on InP(001) grown by a double-cap method
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2710470
Reference23 articles.
1. Indistinguishable photons from a single-photon device
2. Electrically Driven Single-Photon Source
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4. Wavelength tuning of InAs quantum dots grown on (311)B InP
5. Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
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3. Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition;Journal of Crystal Growth;2013-07
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