Multiatomic step formation mechanism of metalorganic vapor phase epitaxial grown GaAs vicinal surfaces and its application to quantum well wires
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Atomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs Surfaces
2. Formation and photoluminescence of quantum wire structures on vicinal (110) GaAs substrates by MBE
3. (AlAs)1/2(GaAs)1/2 fractional-layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor deposition
4. Multi-Atomic Steps on Metalorganic Chemical Vapor Deposition-Grown GaAs Vicinal Surfaces Studied by Atomic Force Microscopy
5. Mechanism of Multiatomic Step Formation during Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy
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1. Stability and controllability of InGaAs/GaAsP wire-on-well (WoW) structure for multi-junction solar cells;Journal of Crystal Growth;2017-04
2. The impact of the surface on step-bunching and diffusion of Ga on GaAs (001) in metal-organic vapour phase epitaxy;Materials Research Express;2016-07-15
3. Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells;Nanoscale;2016
4. Growth of Low-Dimensional Semiconductors Structures;Comprehensive Semiconductor Science and Technology;2011
5. Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces;Journal of Crystal Growth;2003-10
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