Wide terrace formation during metalorganic vapor phase epitaxy of GaAs, AlAs, and AlGaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112069
Reference6 articles.
1. Ultrathin GaAs/GaAlAs layers grown by MOCVD and their structural characterization
2. The meandering of steps on GaAs(100)
3. A reflection high-energy electron diffraction study of (100) GaAs vicinal surfaces
4. Morphology on GaAs surfaces grown by metalorganic chemical vapor deposition and molecular beam epitaxy
5. In-situ microscopy of MBE growth of GaAs and related materials
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Extremely High Peak Current Densities of over 1×106A/cm2in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy;Japanese Journal of Applied Physics;2010-05-20
2. AlGaN/GaN heterostructure grown on 1∘ -tilt sapphire substrate by MOCVD;Superlattices and Microstructures;2008-03
3. Crystal growth and characterization of AlGaN/GaN heterostructures prepared on vicinal-cut sapphire (0001) substrates;Journal of Crystal Growth;2007-10
4. Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers;Japanese Journal of Applied Physics;2005-10-11
5. Nanometric artificial structuring of semiconductor surfaces for crystalline growth;Comptes Rendus Physique;2005-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3