Ultrathin GaAs/GaAlAs layers grown by MOCVD and their structural characterization
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference24 articles.
1. Quantum-well heterostructure lasers
2. Alloy Clustering inAlxGa1−xAs-GaAs Quantum-Well Heterostructures
3. A critical comparison of MOCVD and MBE for heterojunction devices
4. Growth of heterostructures for HEMT devices
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1. Optics, morphology, and growth kinetics of GaAs/AlxGa1−xAs quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy;Physical Review B;2011-10-17
2. Resolution in sputter depth profiling assessed by AlAs/GaAs superlattices;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-05
3. Behavior and mechanism of wide terrace formation during metalorganic vapor phase epitaxy of GaAs and related materials;Journal of Crystal Growth;1994-12
4. Wide terrace formation during metalorganic vapor phase epitaxy of GaAs, AlAs, and AlGaAs;Applied Physics Letters;1994-09-12
5. Self-limiting growth of zinc chalcogenides and their superlattices;Thin Solid Films;1993-03
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