Photoluminescence characterization of type II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Photoluminescence characterization of type II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

Published:2000-02 Issue:2-3 Volume:209 Page:445-449
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mozume Teruo,Georgiev Nikolai,Nishimura Tetsuya,Yoshida Haruhiko,Nishikawa Satoshi,Neogi Arup

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Y. Nakata, Y. Sugiyama, T. Inata, O. Ueda, S. Sasa, S. Muto, T. Fujii, MRS Symposium Proceedings, Vol. 198, 1990, p. 289.

2. Haruhiko Yoshida, Arup Neogi;Mozume;Makoto Kudo, Jpn. J. Appl. Phys.,1999

3. Haruhiko Yoshida, Arup Neogi;Mozume;Makoto Kudo, J. Cryst. Growth,1999

4. Haruhiko Yoshida, Arup Neogi;Mozume;Makoto Kudo, Inst. Phys. Conf. Ser.,1998

5. H. Yoshida, T. Mozume, T. Nishimura, O. Wada, Technical Digest of RIM '97, 1997, p. 127.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Asymmetric and symmetric interfaces in type II MWIR InAs/GaSb superlattices;Surfaces and Interfaces;2024-01

2. Optical and Structural Characterization of InGaAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2002-02-28

3. Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy;Journal of Crystal Growth;2001-07

4. Interface control of InGaAs/AlAsSb heterostructures;Thin Solid Films;2000-12

5. Observation of direct (type-I) transitions in type-II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

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