Optical and Structural Characterization of InGaAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/41/i=2S/a=1008/pdf
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling of Ultrafast Waveguided Electro-Absorption Modulator at Telecommunication Wavelength (λ = 1.55 μm) Based on Intersubband Transition in an InGaAs/AlAs/AlAsSb Asymmetric Coupled Double Quantum Well Lattice-Matched to InP;IEEE Journal of Quantum Electronics;2021-08
2. Short-wavelength quantum cascade lasers;SPIE Proceedings;2008-02-07
3. Improved performance of In0.6Ga0.4As∕AlAs0.67Sb0.33∕InP quantum cascade lasers by introduction of AlAs barriers in the active regions;Applied Physics Letters;2007-07-30
4. Growth of AlAsSb/InGaAs MBE-layers for all-optical switches;Journal of Crystal Growth;2005-05
5. Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy;Journal of Crystal Growth;2005-05
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