Improved performance of In0.6Ga0.4As∕AlAs0.67Sb0.33∕InP quantum cascade lasers by introduction of AlAs barriers in the active regions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2767767
Reference9 articles.
1. Continuous-wave operation of GaInAs-AlGaAsSb quantum cascade lasers
2. GaInAs∕AlAsSb quantum-cascade lasers operating up to 400K
3. InGaAs∕AlAsSb∕InP strain compensated quantum cascade lasers
4. InGaAs∕AlAsSb∕InP quantum cascade lasers operating at wavelengths close to 3μm
5. Optical and Structural Characterization of InGaAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy
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2. Low‐strain, quantum‐cascade‐laser active regions grown on metamorphic buffer layers for emission in the 3.0–4.0 μm wavelength region;IET Optoelectronics;2014-04
3. AlAs/InAlAs-InGaAs QCLs grown by gas-source molecular-beam epitaxy;SPIE Proceedings;2014-02-27
4. Semi-insulating InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers grown by gas-source molecular-beam epitaxy;Journal of Crystal Growth;2013-09
5. Investigations of carrier scattering into L-valley inλ = 3.5 µm InGaAs/AlAs(Sb) quantum cascade lasers using high hydrostatic pressure;physica status solidi (b);2013-04
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