Interface control of InGaAs/AlAsSb heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. 1.45 µm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy
2. Near-infrared intersubband absorption in InGaAs/AlAsSb grown by molecular beam epitaxy
3. Technical Digest of CLEO/Pacific RIM '97;Yoshida,1997
4. InGaAs/AWAsSb Heterostructures Lattice-Matched to InP GRown by Molecular Beam Epitaxy
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1. Comparative study of optical characteristics of SQW and DQWs InGaAs/GaAsSb/AlAsSb based compressively strained heterostructures;Micro and Nanostructures;2023-03
2. Indices of refraction of InGaAs/Alas/AlAsSb multiple-quantum-wells measured by an optical waveguide technique;Physica E: Low-dimensional Systems and Nanostructures;2008-04
3. Impact of Interface Formation on Intersubband Transitions in MBE GaInAs:Si/AlAsSb Multiple Coupled DQWs;2007 IEEE 19th International Conference on Indium Phosphide & Related Materials;2007-05
4. Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy;Journal of Crystal Growth;2005-05
5. Magneto-photoluminescence study of InGaAs/InP and InGaAs/AlAsSb quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2004-03
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