The growth and investigation of SiGe films on buried Ge islands
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Physics and applications of GexSi1-x/Si strained-layer heterostructures
2. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
3. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
4. High electron mobility in modulation‐doped Si/SiGe
5. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Raman tensor elements for wurtzitic GaN and their application to assess crystallographic orientation at film/substrate interfaces;Journal of Applied Physics;2011-07
2. Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing;Applied Surface Science;2008-07
3. A novel technique to grow Ge quantum dots on porous Si by ultrahigh vacuum chemical vapor deposition;Journal of Materials Science Letters;2002
4. Photoluminescence of Ge quantum dots prepared on porous silicon by ultrahigh vacuum chemical vapor deposition;Applied Physics Letters;2001-03-26
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