Photoluminescence of Ge quantum dots prepared on porous silicon by ultrahigh vacuum chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1359144
Reference20 articles.
1. Photoluminescence and electroluminescence of SiGe dots fabricated by island growth
2. Single hole quantum dot transistors in silicon
3. Chemical vapor deposition growth and characterization of undoped and doped Ge and Ge1−xCx quantum dots on Si
4. Optical properties of Si/Si0.87Ge0.13multiple quantum well wires
5. Heterogeneous nucleation of coherently strained islands during epitaxial growth of Ge on Si(110)
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4. Structural and Optical Characterizations of Ge Nanostructures Fabricated by RF Magnetron Sputtering and Rapid Thermal Processing;Acta Physica Polonica A;2012-01
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