Photoluminescence and electroluminescence of SiGe dots fabricated by island growth-Reference-Cited by-同舟云学术

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Photoluminescence and electroluminescence of SiGe dots fabricated by island growth

Published:1995-01-23 Issue:4 Volume:66 Page:445-447
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Apetz R.,Vescan L.,Hartmann A.,Dieker C.,Lüth H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114051

Reference20 articles.

Cited by 262 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy;Japanese Journal of Applied Physics;2024-02-16

4. Single SiGe quantum dot emission deterministically enhanced in a high-Q photonic crystal resonator;Optics Express;2023-04-25

5. One-Stage Formation of Two-Dimensional Photonic Crystal and Spatially Ordered Arrays of Self-Assembled Ge(Si) Nanoislandson Pit-Patterned Silicon-On-Insulator Substrate;Nanomaterials;2021-04-02

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