Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Application of ‘‘critical compositional difference’’ concept to the growth of low dislocation density (<104/cm2) InxGa1−xAs (x≤0.5) on GaAs
2. Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs: A new structure for high performance high electron mobility transistor realization
3. High Gm In0.5Al0.5As/In0.5Ga0.5As high electron mobility transistors grown lattice-mismatched on GaAs substrates
4. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates
5. Low Temperature High Electron Mobility in In0.75Ga0.25As/In0.75Al0.25As Modulation-Doped Hetrostructures Grown on GaAs Substrate
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improvement of Electron Transport in Pseudomorphic In0.52Al0.48As/InyGa1-y As Double Quantum Well Structure;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07
2. Growth variations and scattering mechanisms in metamorphic In0.75Ga0.25As/In0.75 Al0.25As quantum wells grown by molecular beam epitaxy;Journal of Crystal Growth;2015-09
3. Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step;Applied Surface Science;2008-06
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