High-quality metamorphic HEMT grown on GaAs substrates by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates
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2. Growth of Metamorphic InGaAs on GaAs (111)A: Counteracting Lattice Mismatch by Inserting a Thin InAs Interlayer;Crystal Growth & Design;2016-08-25
3. 20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications;International Journal of Electronics;2016-08-17
4. 20-nm T-gate composite channel enhancement-mode metamorphic HEMT on GaAs substrates for future THz applications;Journal of Computational Electronics;2016-08-16
5. High-resolution synchrotron diffraction study of porous buffer InP(001) layers;Journal of Applied Crystallography;2014-09-04
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