Growth of Metamorphic InGaAs on GaAs (111)A: Counteracting Lattice Mismatch by Inserting a Thin InAs Interlayer-Reference-Cited by-同舟云学术

Growth of Metamorphic InGaAs on GaAs (111)A: Counteracting Lattice Mismatch by Inserting a Thin InAs Interlayer

Published:2016-08-25 Issue:9 Volume:16 Page:5412-5417
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Mano Takaaki¹,Mitsuishi Kazutaka¹,Ha Neul¹²,Ohtake Akihiro¹,Castellano Andrea¹³,Sanguinetti Stefano³,Noda Takeshi¹,Sakuma Yoshiki¹,Kuroda Takashi¹²,Sakoda Kazuaki¹

Affiliation:

1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

2. Graduate School of Engineering, Kyushu University−NIMS, 1-1 Namiki, Tsukuba 305-0044, Japan

3. Dip. di Scienza dei Materiali, Università di Milano-Bicocca, Via Cozzi 55, I-20125 Milano, Italy

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.6b00899

Reference29 articles.

1. 1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser

2. Effect of (100) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs

3. High-quality metamorphic HEMT grown on GaAs substrates by MBE

4. Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates

5. High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range

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