Effect of (100) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs-Reference-Cited by-同舟云学术

Effect of (100) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs

Published:2014-04 Issue: Volume:392 Page:11-19
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Galiev G.B.,Vasil'evskii I.S.,Klimov E.А.,Pushkarev S.S.,Klochkov A.N.,Maltsev P.P,Presniakov M.Yu.,Trunkin I.N.,Vasiliev A.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

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