Epitaxial growth of SiC in a chimney CVD reactor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference60 articles.
1. Silicon carbide high-power devices
2. Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers
3. Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination
4. 2000 V 6H‐SiCp‐njunction diodes grown by chemical vapor deposition
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