Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000$\bar{{\bf{1}}}$), and (1$\bar{{\bf{1}}}$00) surfaces-Reference-Cited by-同舟云学术

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Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000$\bar{{\bf{1}}}$), and (1$\bar{{\bf{1}}}$00) surfaces

Published:2019-10-24 Issue:11 Volume:58 Page:115501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chokawa Kenta,Makino Emi,Hosokawa Norikazu,Onda Shoichi,Kangawa Yoshihiro,Shiraishi Kenji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://iopscience.iop.org/article/10.7567/1347-4065/ab4c21/pdf

Reference44 articles.

1. Semiconductors for high‐voltage, vertical channel field‐effect transistors

2. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

3. Investigation of growth processes of ingots of silicon carbide single crystals

4. General principles of growing large-size single crystals of various silicon carbide polytypes

5. Study of the concentration distribution of SiC vapour in the crystal growth zone

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomistic Removal Mechanisms of SiC in Hydrogen Peroxide Solution;Micromachines;2024-06-03

2. First principles calculation of strain effects on the density of interface states in 4H-SiC;Journal of Crystal Growth;2023-06

3. Designing silicon carbide heterostructures for quantum information science: challenges and opportunities;Materials for Quantum Technology;2022-05-23

4. First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments;Japanese Journal of Applied Physics;2021-07-26

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