Surfactant-mediated growth of Ge/Si(001) studied by Raman spectroscopy and TEM
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Surfactants in epitaxial growth
2. Microstructure and strain relief of Ge films grown layer by layer on Si(001)
3. Influence of surfactants in Ge and Si epitaxy on Si(001)
4. Surfactant‐mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te
5. Influence of surfactant coverage on epitaxial growth of Ge on Si(001)
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2. Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method;Applied Physics Letters;2013-10-21
3. Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy;Japanese Journal of Applied Physics;2012-05-01
4. Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy;Japanese Journal of Applied Physics;2012-04-27
5. Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers;Applied Physics Express;2011-01-27
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