Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers-Reference-Cited by-同舟云学术

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Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers

Published:2011-01-27 Issue:2 Volume:4 Page:024102
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Hanafusa Hiroaki,Hirose Nobumitsu,Kasamatsu Akifumi,Mimura Takashi,Matsui Toshiaki,Chong Harold M. H.,Mizuta Hiroshi,Suda Yoshiyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/4/i=2/a=024102/pdf

Reference20 articles.

1. Electron resonant tunneling in Si/SiGe double barrier diodes

2. Evidence of phonon-absorption-assisted electron resonant tunneling in Si/Si1−xGex diodes

3. The scaled performance of Si/Si/sub 1-x/Gex resonant tunneling diodes

4. Electron resonant tunneling with a high peak-to-valley ratio at room temperature in Si1−xGex/Si triple barrier diodes

5. Theoretical calculations of heterojunction discontinuities in the Si/Ge system

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hole-tunneling Si0.82Ge0.18/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/cm2 fabricated by sputter epitaxy;Applied Physics Letters;2024-02-26

2. Impact of Sn incorporation on sputter epitaxy of GeSn;Applied Physics Express;2023-09-01

3. Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-well resonant tunneling diode with high resonance current and suppressed thermionic emission;Japanese Journal of Applied Physics;2020-07-27

4. Crystallization of GeSn thin films deposited on Ge(100) substrate by magnetron sputtering;Materials Science in Semiconductor Processing;2018-12

5. Design and analysis of the dynamic frequency divider using the BiCMOS–NDR chaos-based circuit;Analog Integrated Circuits and Signal Processing;2018-05-07

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