Author:
Wesch W.,Gärtner K.,Wendler E.,Götz G.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
19 articles.
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1. Distribution of radiation induced defects and modification of optical constants of GaAs implanted with high energy 56Fe ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-11
2. Investigation of weakly damaged 〈110〉, 〈111〉 and 〈100〉 silicon by means of temperature dependent dechanneling measurements;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09
3. High energy ion implantation in GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
4. X-ray and channeling analysis of ion implanted gallium arsenide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-01
5. Modification of AmBv Semiconductor Layers by Ion Implantation;MRS Proceedings;1993