X-ray and channeling analysis of ion implanted gallium arsenide-Reference-Cited by-同舟云学术

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X-ray and channeling analysis of ion implanted gallium arsenide

Published:1993-01 Issue: Volume:80-81 Page:798-801
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kozanecki A.,Scaly B.J.,Gwilliam R.,Kidd P.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Ion implantation in GaAs

2. Defect production during ion implantation of variousAIIIBVsemiconductors

3. Ion implantation for isolation of III-V semiconductors

4. Strain in GaAs by low‐dose ion implantation

5. Nonlinear strain effects in ion‐implanted GaAs

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sample curvature and dislocation density studies on ion-implanted GaAs by x-ray diffraction;Semiconductor Science and Technology;2003-04-10

2. PHOTOACOUSTIC AND X-RAY STUDIES ON H+ ION IMPLANTED n-GaAs;Solid State Ionics;2002-12

3. Photoacoustic and X-ray Studies on H Ion Implanted n-GaAs;Crystal Research and Technology;2002-11

4. High resolution XRD study of GaAs implanted with 50 MeV 120Sn ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-12

5. Electrical and Optical Properties of Highly Non-stoichiometric GaAs;Acta Physica Polonica A;1995-02

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