Sample curvature and dislocation density studies on ion-implanted GaAs by x-ray diffraction-Reference-Cited by-同舟云学术

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Sample curvature and dislocation density studies on ion-implanted GaAs by x-ray diffraction

Published:2003-04-10 Issue:6 Volume:18 Page:404-408
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Nair Geeta P,Chandrasekaran K S,Narsale A M,Arora B M,Kanjilal D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. A high-resolution multiple-crystal multiple-reflection diffractometer

2. Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films

3. X‐ray double‐crystal analysis of misorientation and strain in GaAs/Si and related heterostructures

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlled nano-roughening of the GaN surface by post-growth thermal annealing;Applied Surface Science;2024-05

2. The influence of In composition on properties of In x Ga 1-x As/GaAs structures grown by MOVPE and in situ monitored by spectral reflectance;Superlattices and Microstructures;2017-01

3. Effect of heavy ion irradiation on self-assembled Pr3+:ZnS/TiO2nanocrystals;Materials Research Express;2014-02-24

4. Temperature effect study on structural and morphological properties of In.08Ga.92As/GaAs structures grown by MOVPE;Journal of Crystal Growth;2008-12

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