X‐ray double‐crystal analysis of misorientation and strain in GaAs/Si and related heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353282
Reference11 articles.
1. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
2. Structural properties of GaAs on (001) oriented Si and Ge substrates
3. Residual Stress in GaAs Layer Grown on 4°-Off (100)Si by MBE
4. Gallium arsenide and other compound semiconductors on silicon
5. GaAs light‐emitting diodes fabricated on Ge‐coated Si substrates
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